- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
428
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 60A | Through Hole | TO-247-3 | + 150 C | Tube | 375 W | Single | 1200 V | 2.3 V | 100 A | 600 nA | 5.8 V | |||
|
|
217
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 60A | Through Hole | TO-247-3 | + 150 C | Tube | 375 W | Single | 1200 V | 2.3 V | 100 A | 600 nA | 5.8 V | |||
|
|
1,137
In-stock
|
onsemi | IGBT Transistors 1200V/50A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2.2 V | 100 A | 200 nA | 30 V | |||
|
|
36
In-stock
|
Infineon Technologies | IGBT Transistors 1200V 100A GAR CH | Screw | IS4 (34 mm )-5 | + 150 C | 625 W | Single | 1200 V | 2.5 V | 100 A | 400 nA | +/- 20 V | ||||
|
|
33
In-stock
|
IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 420 W | Single | 1200 V | 1.7 V | 100 A | 400 nA | 30 V | |||
|
|
20
In-stock
|
IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 420 W | Single | 1200 V | 1.7 V | 100 A | 400 nA | 30 V |
