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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB50N120FL2WG
1+
$9.330
10+
$8.430
25+
$8.040
100+
$6.980
RFQ
1,137
In-stock
onsemi IGBT Transistors 1200V/50A FAST IGBT FSII Through Hole TO-247 + 175 C Tube 535 W Single 1200 V 2.2 V 100 A 200 nA 30 V
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