IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	APT45GP120BG	1+ $19.780 10+ $17.980 25+ $16.630 50+ $15.730		PDF RFQ	22 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C	Tube	625 W	Single	1.2 kV	3.3 V	100 A	100 nA	30 V
	APT75GP120B2G	1+ $25.590 5+ $24.440 10+ $23.680 25+ $21.760		PDF RFQ	100 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	T-MAX-3	+ 150 C		1.042 kW	Single	1.2 kV	3.3 V	100 A	100 nA	30 V