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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IGW15T120
1+
$2.720
10+
$2.310
100+
$2.000
250+
$1.900
RFQ
4,110
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 1200V 15A Through Hole TO-247-3 + 150 C Tube 110 W Single 1200 V 2.2 V 30 A 100 nA +/- 20 V
IGW15N120H3
1+
$3.840
10+
$3.260
100+
$2.830
250+
$2.680
RFQ
275
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 150 C Tube 217 W   1200 V 2.7 V 30 A 600 nA +/- 20 V
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