- Mounting Style :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
23 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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3,848
In-stock
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Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 3.4 V | 30 A | +/- 20 V | |||||
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167
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 156 W | Single | 1.2 kV | 1.5 V | 30 A | 100 nA | +/- 20 V | ||||
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97
In-stock
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IXYS | IGBT Transistors | Through Hole | TO-247-3 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | |||||
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821
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 15A NPT IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 178 W | Single | 600 V | 2.7 V | 30 A | +/- 10 uA | +/- 20 V | ||||
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923
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A l... | Through Hole | TO-220FP-3 | + 175 C | 31 W | Single | 650 V | 1.55 V | 30 A | + / - 250 uA | +/- 20 V | |||||
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795
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 FP | + 175 C | Tube | 30 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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956
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A ... | Through Hole | TO-220-3 | + 175 C | 136 W | Single | 650 V | 1.55 V | 30 A | + / - 250 uA | +/- 20 V | |||||
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200
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 259 W | Single | 1.2 kV | 1.55 V | 30 A | 250 nA | +/- 20 V | ||||
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997
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK | + 175 C | Reel | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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963
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A l... | SMD/SMT | D2PAK-3 | + 175 C | Reel | 136 W | Single | 650 V | 1.55 V | 30 A | + / - 250 uA | +/- 20 V | ||||
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40
In-stock
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IXYS | IGBT Transistors | SMD/SMT | TO-268-2 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | |||||
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213
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 1.2 kV | 3.5 V | 30 A | +/- 20 V | ||||||
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4,110
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 15A | Through Hole | TO-247-3 | + 150 C | Tube | 110 W | Single | 1200 V | 2.2 V | 30 A | 100 nA | +/- 20 V | ||||
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275
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 217 W | 1200 V | 2.7 V | 30 A | 600 nA | +/- 20 V | |||||
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274
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 | + 175 C | Tube | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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165
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 259 W | Single | 1.2 kV | 1.55 V | 30 A | 250 nA | +/- 20 V | ||||
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17
In-stock
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IXYS | IGBT Transistors 30 Amps 600V | Through Hole | ISOPLUS i4-PAC-5 | + 150 C | Tube | 100 W | Dual | 600 V | 1.9 V | 30 A | 200 nA | +/- 20 V | ||||
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163
In-stock
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onsemi | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 278 W | Single | 1.2 kV | 2.1 V | 30 A | 100 nA | +/- 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB... | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 3.4 V | 30 A | +/- 20 V | |||||
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514
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 260 W | Single | 650 V | 1.75 V | 30 A | 250 nA | +/- 20 V | ||||
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VIEW | Toshiba | IGBT Transistors 600V/30A DIS | Through Hole | TO-3P | + 150 C | Single | 600 V | 30 A | +/- 20 V | ||||||||
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376
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 260 W | Single | 650 V | 1.75 V | 30 A | 250 nA | +/- 20 V | ||||
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107
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 30A | Through Hole | TO-247-3 | + 150 C | Tube | 187 W | Single | 600 V | 1.5 V | 30 A | +/- 20 V |