- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Gate-Emitter Leakage Current :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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821
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 15A NPT IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 178 W | Single | 600 V | 2.7 V | 30 A | +/- 10 uA | +/- 20 V | ||||
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795
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 FP | + 175 C | Tube | 30 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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997
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK | + 175 C | Reel | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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274
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 | + 175 C | Tube | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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17
In-stock
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IXYS | IGBT Transistors 30 Amps 600V | Through Hole | ISOPLUS i4-PAC-5 | + 150 C | Tube | 100 W | Dual | 600 V | 1.9 V | 30 A | 200 nA | +/- 20 V | ||||
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VIEW | Toshiba | IGBT Transistors 600V/30A DIS | Through Hole | TO-3P | + 150 C | Single | 600 V | 30 A | +/- 20 V | ||||||||
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107
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 30A | Through Hole | TO-247-3 | + 150 C | Tube | 187 W | Single | 600 V | 1.5 V | 30 A | +/- 20 V |