IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IKP15N65H5XKSA1	GET PRICE	PDF RFQ	552 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-220-3	+ 175 C	Tube	105 W	Single	650 V	1.95 V	30 A	100 nA	20 V
IKP15N65F5XKSA1	GET PRICE	PDF RFQ	274 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-220-3	+ 175 C	Tube	105 W	Single	650 V	1.9 V	30 A	100 nA	20 V
IKP15N65H5	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP...	Through Hole	TO-220-3	+ 175 C		105 W	Single	650 V	1.95 V	30 A	100 nA	20 V
IKP15N65F5	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP...	Through Hole	TO-220-3	+ 175 C		105 W	Single	650 V	1.9 V	30 A	100 nA	20 V

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