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Package / Case :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IHW15N120E1XKSA1
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Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 150 C Tube 156 W Single 1.2 kV 1.5 V 30 A 100 nA +/- 20 V
NGTB15N120FLWG
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onsemi IGBT Transistors 1200V/15A IGBT SOLAR/UPS Through Hole TO-247 + 150 C Tube 156 W Single 1200 V 2 V 30 A 100 nA 20 V
NGTB15N120LWG
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296
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onsemi IGBT Transistors 1200V/15A IGBT LPT TO-247 Through Hole TO-247   Tube 156 W   1200 V 2.2 V 30 A 100 nA 20 V
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