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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IHW15N120E1XKSA1
1+
$2.110
10+
$1.790
100+
$1.440
500+
$1.260
RFQ
167
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 150 C Tube 156 W Single 1.2 kV 1.5 V 30 A 100 nA +/- 20 V
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