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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGY160T65SPD_F085
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RFQ
417
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Fairchild Semiconductor IGBT Transistors 650V Field Stop Gen3 Trench IGBT Through Hole TO-247-3 + 175 C Tube 882 W Single 650 V 1.6 V 240 A +/- 250 nA +/- 20 V
FGY120T65SPD_F085
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RFQ
702
In-stock
Fairchild Semiconductor IGBT Transistors 650V FS Trench IGBT Gen3 Through Hole TO-247-3 + 175 C Tube 882 W Single 650 V 1.5 V 240 A + / - 250 nA +/- 20 V
IXGK120N120A3
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RFQ
75
In-stock
IXYS IGBT Transistors 120 Amps 1200V Through Hole TO-264-3 + 150 C Tube 830 W Single 1.2 kV 1.85 V 240 A 400 nA +/- 20 V
IRGPS46160DPBF
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RFQ
15
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Infineon Technologies IGBT Transistors 600V TRENCH IGBT ULTRAFAST Through Hole TO-247-3 + 175 C Tube 750 W Single 600 V 2.2 V 240 A 400 nA +/- 20 V
IXGX120N120A3
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RFQ
24
In-stock
IXYS IGBT Transistors 120 Amps 1200V Through Hole PLUS 247-3 + 150 C Tube 830 W Single 1.2 kV 1.85 V 240 A 400 nA +/- 20 V
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