Build a global manufacturer and supplier trusted trading platform.
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGY160T65SPD_F085
1+
$14.920
10+
$13.720
25+
$13.150
100+
$11.590
RFQ
417
In-stock
Fairchild Semiconductor IGBT Transistors 650V Field Stop Gen3 Trench IGBT Through Hole TO-247-3 + 175 C Tube 882 W Single 650 V 1.6 V 240 A +/- 250 nA +/- 20 V
FGY120T65SPD_F085
1+
$12.790
10+
$11.760
25+
$11.270
100+
$9.930
RFQ
702
In-stock
Fairchild Semiconductor IGBT Transistors 650V FS Trench IGBT Gen3 Through Hole TO-247-3 + 175 C Tube 882 W Single 650 V 1.5 V 240 A + / - 250 nA +/- 20 V
IRGPS46160DPBF
1+
$15.470
10+
$14.230
25+
$13.640
50+
$12.900
RFQ
15
In-stock
Infineon Technologies IGBT Transistors 600V TRENCH IGBT ULTRAFAST Through Hole TO-247-3 + 175 C Tube 750 W Single 600 V 2.2 V 240 A 400 nA +/- 20 V
Page 1 / 1