- Manufacture :
- Gate-Emitter Leakage Current :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
417
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650V Field Stop Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.6 V | 240 A | +/- 250 nA | +/- 20 V | ||||
|
702
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650V FS Trench IGBT Gen3 | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.5 V | 240 A | + / - 250 nA | +/- 20 V | ||||
|
15
In-stock
|
Infineon Technologies | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Through Hole | TO-247-3 | + 175 C | Tube | 750 W | Single | 600 V | 2.2 V | 240 A | 400 nA | +/- 20 V |