IGBT Transistors - Kaimeite

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7 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	FGA20S125P_SN00336		GET PRICE	PDF RFQ	1,732 In-stock	Fairchild Semiconductor	IGBT Transistors 1250V 20A Shorted Anode IGBT	Through Hole	TO-3	+ 175 C	Tube	250 W	Single	1.25 kV	2 V	40 A	+/- 500 nA	+/- 25 V
	FGA50N100BNTDTU		GET PRICE	PDF RFQ	407 In-stock	Fairchild Semiconductor	IGBT Transistors 600V 4 0A UFD	Through Hole	TO-3P-3	+ 150 C	Tube	156 W	Single	1000 V	2.5 V		+/- 500 nA	+/- 25 V
	FGH30S150P		GET PRICE	PDF RFQ	397 In-stock	Fairchild Semiconductor	IGBT Transistors 1500V 30A FS SA Trench IGBT	Through Hole	TO-247-3	+ 175 C	Tube	500 W	Single	1.5 kV	2.15 V	60 A	+/- 500 nA	+/- 25 V
	VS-GP300TD60S		GET PRICE	PDF RFQ	12 In-stock	Vishay Semiconductors	IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT	Chassis	DIAP	+ 150 C		1.136 kW	Dual	600 V	-	580 A	+/- 500 nA	20 V
	VS-GP100TS60SFPBF		GET PRICE	PDF RFQ	4 In-stock	Vishay Semiconductors	IGBT Transistors Ic 100A Vce(On)1.16V Half Brdge Trench PT	Chassis	INT-A-PAK	+ 150 C		781 W	Dual	600 V	-	337 A	+/- 500 nA	20 V
	FGL60N100BNTDTU		GET PRICE	PDF RFQ	4,000 In-stock	Fairchild Semiconductor	IGBT Transistors HIGH POWER	Through Hole	TO-264-3	+ 150 C	Tube	180 W	Single	1000 V	1.5 V	60 A	+/- 500 nA	+/- 25 V
	FGL60N100BNTD		GET PRICE	PDF RFQ	5,650 In-stock	Fairchild Semiconductor	IGBT Transistors HIGH POWER	Through Hole	TO-264-3	+ 150 C	Tube	180 W	Single	1000 V	1.5 V	60 A	+/- 500 nA	+/- 25 V

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