IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
FGA50N100BNTDTU	GET PRICE	PDF RFQ	407 In-stock	Fairchild Semiconductor	IGBT Transistors 600V 4 0A UFD	Through Hole	TO-3P-3	+ 150 C	Tube	156 W	Single	1000 V	2.5 V		+/- 500 nA	+/- 25 V
FGL60N100BNTDTU	GET PRICE	PDF RFQ	4,000 In-stock	Fairchild Semiconductor	IGBT Transistors HIGH POWER	Through Hole	TO-264-3	+ 150 C	Tube	180 W	Single	1000 V	1.5 V	60 A	+/- 500 nA	+/- 25 V
FGL60N100BNTD	GET PRICE	PDF RFQ	5,650 In-stock	Fairchild Semiconductor	IGBT Transistors HIGH POWER	Through Hole	TO-264-3	+ 150 C	Tube	180 W	Single	1000 V	1.5 V	60 A	+/- 500 nA	+/- 25 V

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