IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRGB4056DPBF	GET PRICE	PDF RFQ	493 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3	+ 175 C	Tube	140 W	Single	600 V	1.55 V	24 A	100 nA	+/- 20 V
IHW30N110R3	GET PRICE	PDF RFQ	374 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247	+ 175 C	Tube	333 W	Single	1100 V	1.55 V	60 A	100 nA	20 V
IXXH50N60B3D1	GET PRICE	PDF RFQ	31 In-stock	IXYS	IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT	Through Hole	TO-247-3	+ 175 C	Tube	600 W		600 V	1.55 V	120 A	100 nA	+/- 20 V
IHW30N110R3FKSA1	GET PRICE	PDF RFQ	220 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	333 W	Single	1100 V	1.55 V	60 A	100 nA	20 V
IXGH60N30C3	GET PRICE	PDF RFQ	60 In-stock	IXYS	IGBT Transistors 60 Amps 300V	Through Hole	TO-247AD-3	+ 150 C	Tube	300 W	Single	300 V	1.55 V	75 A	100 nA	+/- 20 V

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