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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGB4056DPBF
1+
$2.720
10+
$2.310
100+
$2.000
250+
$1.900
RFQ
493
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast Trench IGBT Through Hole TO-220AB-3 + 175 C Tube 140 W Single 600 V 1.55 V 24 A 100 nA +/- 20 V
IHW30N110R3
1+
$4.140
10+
$3.520
100+
$3.050
250+
$2.900
RFQ
374
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247 + 175 C Tube 333 W Single 1100 V 1.55 V 60 A 100 nA 20 V
IXXH50N60B3D1
1+
$9.600
10+
$8.680
25+
$8.270
100+
$7.180
RFQ
31
In-stock
IXYS IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT Through Hole TO-247-3 + 175 C Tube 600 W   600 V 1.55 V 120 A 100 nA +/- 20 V
Default Photo
1+
$4.140
10+
$3.520
100+
$3.050
250+
$2.900
RFQ
220
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 333 W Single 1100 V 1.55 V 60 A 100 nA 20 V
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