2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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428
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 60A | Through Hole | TO-247-3 | + 150 C | Tube | 375 W | Single | 1200 V | 2.3 V | 100 A | 600 nA | 5.8 V | |||
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217
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 60A | Through Hole | TO-247-3 | + 150 C | Tube | 375 W | Single | 1200 V | 2.3 V | 100 A | 600 nA | 5.8 V |
