- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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260
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 1150 W | Single | 1200 V | 2.9 V | 188 A | 100 nA | 30 V | |||
|
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34
In-stock
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IXYS | IGBT Transistors IGBT, Diode 1200V, 75A | Through Hole | TO-247-3 | + 150 C | Tube | 380 W | Single | 1.2 kV | 2.9 V | 75 A | 100 nA | +/- 20 V | |||
|
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20
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs | Through Hole | TO-247-3 | + 175 C | Tube | 484 W | Single | 1200 V | 2.9 V | 104 A | 100 nA | 30 V | |||
|
GET PRICE |
20
In-stock
|
IXYS | IGBT Transistors 1200V 188A XPT IGBT | Through Hole | TO-264-3 | + 175 C | Tube | 1150 W | Single | 1200 V | 2.9 V | 188 A | 100 nA | 30 V |