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Package / Case :
Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXYX100N120C3
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RFQ
260
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT Through Hole TO-247-3 + 175 C Tube 1150 W Single 1200 V 2.9 V 188 A 100 nA 30 V
IXGH40N120B2D1
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RFQ
34
In-stock
IXYS IGBT Transistors IGBT, Diode 1200V, 75A Through Hole TO-247-3 + 150 C Tube 380 W Single 1.2 kV 2.9 V 75 A 100 nA +/- 20 V
IXYR100N120C3
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RFQ
20
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs Through Hole TO-247-3 + 175 C Tube 484 W Single 1200 V 2.9 V 104 A 100 nA 30 V
IXYK100N120C3
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RFQ
20
In-stock
IXYS IGBT Transistors 1200V 188A XPT IGBT Through Hole TO-264-3 + 175 C Tube 1150 W Single 1200 V 2.9 V 188 A 100 nA 30 V
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