Build a global manufacturer and supplier trusted trading platform.
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXYH50N120C3D1
1+
$10.710
10+
$9.680
25+
$9.230
100+
$8.010
RFQ
180
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT Through Hole TO-247-3 + 150 C Tube 625 W Single 1200 V 4.2 V 90 A 100 nA 30 V
AUIRGF65G40D0
1+
$10.230
10+
$9.240
25+
$8.810
50+
$8.210
RFQ
230
In-stock
IR / Infineon IGBT Transistors DISCRETES Through Hole TO-247-3 + 175 C Tube 625 W Single 600 V 3 V 62 A +/- 100 nA +/- 20 V
APT45GP120BG
1+
$19.780
10+
$17.980
25+
$16.630
50+
$15.730
RFQ
22
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-247-3 + 150 C Tube 625 W Single 1.2 kV 3.3 V 100 A 100 nA 30 V
IXYH50N120C3
1+
$11.380
10+
$10.280
25+
$9.800
100+
$8.510
RFQ
28
In-stock
IXYS IGBT Transistors XPT IGBT C3-Class 1200V/105A Through Hole TO-247-3 + 150 C Tube 625 W Single 1200 V 2.5 V 105 A 100 nA 30 V
APT80GA60B
1+
$11.520
10+
$10.370
25+
$9.450
50+
$8.800
RFQ
13
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-247-3 + 150 C Tube 625 W Single 600 V 2 V 143 A 100 nA 30 V
HGTG40N60A4
1+
$11.000
10+
$10.000
25+
$10.000
100+
$9.000
RFQ
3,000
In-stock
Fairchild Semiconductor IGBT Transistors 600V N-Channel IGBT SMPS Series Through Hole TO-247-3 + 150 C Tube 625 W Single 600 V 1.7 V 75 A +/- 250 nA +/- 20 V
Page 1 / 1