IGBT Transistors - Kaimeite

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8 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRGB4620DPBF		GET PRICE	PDF RFQ	539 In-stock	Infineon Technologies	IGBT Transistors 600V TRENCH IGBT ULTRAFAST	Through Hole	TO-220AB-3	+ 175 C	Tube	140 W	Single	600 V	1.97 V	32 A	100 nA	+/- 20 V
	IRGB4056DPBF		GET PRICE	PDF RFQ	493 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3	+ 175 C	Tube	140 W	Single	600 V	1.55 V	24 A	100 nA	+/- 20 V
	GB4062D		GET PRICE	PDF RFQ	12,100 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3		Tube	250 W	Single	600 V	1.95 V	48 A		+/- 20 V
	IRGB4061DPBF		GET PRICE	PDF RFQ	410 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3	+ 175 C	Tube	206 W	Single	600 V	1.95 V	36 A		+/- 20 V
	IRGB6B60KDPBF		GET PRICE	PDF RFQ	295 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 10-30kHz	Through Hole	TO-220AB-3		Tube	90 W	Single	600 V	2 V	13 A		+/- 20 V
	IRGB4630DPBF		GET PRICE	PDF RFQ	198 In-stock	Infineon Technologies	IGBT Transistors 600V TRENCH IGBT ULTRAFAST	Through Hole	TO-220AB-3	+ 175 C	Tube	206 W	Single	600 V	2.15 V	47 A	100 nA	+/- 20 V
	IRGB4B60KD1PBF		GET PRICE	PDF RFQ	486 In-stock	Infineon Technologies	IGBT Transistors 600V Low-Vceon Non Punch Through	Through Hole	TO-220AB-3		Tube	63 W	Single	600 V	2.5 V	12 A		+/- 20 V
	IRGB4060DPBF		GET PRICE	PDF RFQ	522 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3	+ 175 C	Tube	99 W	Single	600 V	1.85 V	16 A		+/- 20 V

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