IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRGB4056DPBF	1+ $2.720 10+ $2.310 100+ $2.000 250+ $1.900		PDF RFQ	493 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3	+ 175 C	Tube	140 W	Single	600 V	1.55 V	24 A	100 nA	+/- 20 V
	IHW30N110R3	1+ $4.140 10+ $3.520 100+ $3.050 250+ $2.900		PDF RFQ	374 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247	+ 175 C	Tube	333 W	Single	1100 V	1.55 V	60 A	100 nA	20 V
	IHW30N110R3FKSA1	1+ $4.140 10+ $3.520 100+ $3.050 250+ $2.900		PDF RFQ	220 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	333 W	Single	1100 V	1.55 V	60 A	100 nA	20 V
	IXGH60N30C3	1+ $4.370 10+ $3.720 100+ $3.220 250+ $3.060		PDF RFQ	60 In-stock	IXYS	IGBT Transistors 60 Amps 300V	Through Hole	TO-247AD-3	+ 150 C	Tube	300 W	Single	300 V	1.55 V	75 A	100 nA	+/- 20 V

IRGB4056DPBF

IRGB4056DPBF

Infineon Technologies

IGBT Transistors 600V UltraFast Trench IGBT

Stock : 493

1+: $2.720

10+: $2.310

100+: $2.000

250+: $1.900

IHW30N110R3

IHW30N110R3

Infineon Technologies

IGBT Transistors IGBT PRODUCTS

Stock : 374

1+: $4.140

10+: $3.520

100+: $3.050

250+: $2.900

Default Photo

IHW30N110R3FKSA1

Infineon Technologies

IGBT Transistors IGBT PRODUCTS

Stock : 220

1+: $4.140

10+: $3.520

100+: $3.050

250+: $2.900

IXGH60N30C3

IXGH60N30C3

IXYS

IGBT Transistors 60 Amps 300V

Stock : 60

1+: $4.370

10+: $3.720

100+: $3.220

250+: $3.060

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