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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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94
In-stock
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IR / Infineon | IGBT Transistors Trnch IGBT 1200V 10A single IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 210 W | Single | 1.2 kV | 2.05 V | 33 A | 100 nA | +/- 30 V | ||
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150
In-stock
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IR / Infineon | IGBT Transistors 1200V 55A | Through Hole | TO-247-3 | Tube | 210 W | Single | 1.2 kV | 2.2 V | 55 A | +/- 30 V |
