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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG7PH30K10PBF
1+
$3.900
10+
$3.310
100+
$2.870
250+
$2.720
RFQ
94
In-stock
IR / Infineon IGBT Transistors Trnch IGBT 1200V 10A single IGBT Through Hole TO-247-3 + 175 C Tube 210 W Single 1.2 kV 2.05 V 33 A 100 nA +/- 30 V
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