MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	DMG9N65CT	1+ $1.040 10+ $0.885 100+ $0.680 500+ $0.601		PDF RFQ	357 In-stock	Diodes Incorporated	MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	9 A	1.3 Ohms	3 V	39 nC	Enhancement
	DMG4N65CT	1+ $1.050 10+ $0.896 100+ $0.689 500+ $0.609		PDF RFQ	185 In-stock	Diodes Incorporated	MOSFET N-CH MOSFET 650V 4A	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	4 A	2.1 Ohms	3 V	13.5 nC	Enhancement
	DMG4N65CTI	1+ $0.840 10+ $0.695 100+ $0.448 1000+ $0.359		PDF RFQ	365 In-stock	Diodes Incorporated	MOSFET N-CH MOSFET 650V 4A	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	650 V	4 A	2.1 Ohms	3 V	13.5 nC	Enhancement
	DMG9N65CTI	50+ $1.250 100+ $1.000 500+ $0.876 1000+ $0.725		PDF RFQ	2,250 In-stock	Diodes Incorporated	MOSFET N-CH MOSFET 650V 9A		Through Hole	TO-220-3			Tube	1 Channel	Si	N-Channel	650 V	9 A	1.3 Ohms

DMG9N65CT

DMG9N65CT

Diodes Incorporated

MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A

Stock : 357

1+: $1.040

10+: $0.885

100+: $0.680

500+: $0.601

DMG4N65CT

DMG4N65CT

Diodes Incorporated

MOSFET N-CH MOSFET 650V 4A

Stock : 185

1+: $1.050

10+: $0.896

100+: $0.689

500+: $0.609

DMG4N65CTI

DMG4N65CTI

Diodes Incorporated

MOSFET N-CH MOSFET 650V 4A

Stock : 365

1+: $0.840

10+: $0.695

100+: $0.448

1000+: $0.359

DMG9N65CTI

DMG9N65CTI

Diodes Incorporated

MOSFET N-CH MOSFET 650V 9A

Stock : 2,250

50+: $1.250

100+: $1.000

500+: $0.876

1000+: $0.725

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