- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Id - Continuous Drain Current :
-
- 1.8 A (1)
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- 13 A (15)
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- 13.9 A (1)
- 130 A (1)
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- 42 A (3)
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- 5 A (7)
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- 52 A (1)
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- 54 A (1)
- 57.7 A (2)
- 58 A (1)
- 6 A (13)
- 6.1 A (1)
- 6.4 A (1)
- 6.6 A (1)
- 6.7 A (1)
- 6.8 A (2)
- 6.9 A (1)
- 60 A (2)
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- 64 A (1)
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- 7 A (16)
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- 96 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.058 Ohms (1)
- 1 Ohms (3)
- 1.02 Ohms (1)
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- 1.2 Ohms (3)
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- 95 mOhms (2)
- 950 mOhms (1)
- 96 mOhms (1)
- 980 mOhms (1)
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - (2)
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- 80.4 nC (2)
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- 9 nC (3)
- 9.8 nC (4)
- 93 nC (12)
- 98 nC (4)
- Applied Filters :
526 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,450
In-stock
|
Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | - 5 V, + 23 V | Tube | 1 Channel | 133 W | N-Channel | 650 V | 35 A | 74 mOhms | 5.7 V | 28 nC | TO-247 | 30 | Green available | |||||||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSF... | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.2 Ohms | Enhancement | ||||||||||||||
|
|
586
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5 | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 138 A | 15 mOhms | 4 V | 414 nC | |||||||||
|
|
3,159
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3.5 V | 93 nC | Enhancement | CoolMOS | |||||||
|
|
1,382
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3.5 V | 93 nC | Enhancement | CoolMOS | |||||||
|
|
5,340
In-stock
|
STMicroelectronics | MOSFET N-Ch 650V 0.024 Ohm 84A MDMesh M5 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 84 A | 29 mOhms | 204 nC | Enhancement | |||||||||
|
|
601
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 V 0.024 Ohm 84 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 84 A | 24 mOhms | 4 V | 240 nC | Enhancement | MDmesh | |||||||
|
|
4,743
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 900 mOhms | 3.5 V | 13 nC | SuperFET II | ||||||||
|
|
2,102
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | 3.5 V | 34 nC | SuperFET II | ||||||||
|
|
875
In-stock
|
Fairchild Semiconductor | MOSFET Low Power Two-Input Logic Gate TinyLogic | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15 A | 260 mOhms | 3.5 V | 48 nC | SuperFET II | ||||||||
|
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1,023
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-CHAN MOSFET | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 190 mOhms | 3.5 V | 82 nC | SuperFET II | |||||||||
|
|
1,448
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 190 mohm 650V FRFET | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 190 mOhms | 5 V | 60 nC | SuperFET II FRFET | ||||||||
|
|
1,240
In-stock
|
Fairchild Semiconductor | MOSFET 650V 44A N-Channel SuperFET MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||||||
|
|
885
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 140 mOhms | Enhancement | SupreMOS | |||||||||
|
|
1,717
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET3 650V 70mOhm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 44 A | 70 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||||||
|
|
669
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm, FRFET | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 3 V | 98 nC | Enhancement | SuperFET II FRFET | |||||||
|
|
615
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | SuperFET II FRFET | |||||||
|
|
900
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 29.7 A | 58 mOhms | 5 V | 210 nC | |||||||||
|
|
GET PRICE |
6,470
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 68.5 A | 37 mOhms | 3.5 V | 300 nC | Enhancement | CoolMOS | ||||||
|
|
464
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 54 A | 184 mOhms | 3 V | 126 nC | Enhancement | SuperFET II | |||||||
|
|
GET PRICE |
4,425
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 167 nC | Enhancement | CoolMOS | ||||||
|
|
5,600
In-stock
|
Fairchild Semiconductor | MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 41 mOhms | 3 V | 229 nC | Enhancement | SuperFET II UniFET FRFET | |||||||
|
|
605
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 96 mOhms | 3 V | 234 nC | Enhancement | SuperFET II | |||||||
|
|
1,063
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||||||
|
|
542
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | |||||||
|
|
545
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||||||
|
|
316
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||||||
|
|
1,304
In-stock
|
Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||||||
|
|
2,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 17.5A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | |||||||
|
|
219
In-stock
|
IXYS | MOSFET MOSFET 650V/80A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 80 A | 40 mOhms | 2.7 V | 143 nC | Enhancement |
