- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
36,533
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 2 Ohms | Enhancement | |||||
|
|
4,473
In-stock
|
Diodes Incorporated | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | 16 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 9.1 A | 15 mOhms | 2 V | 6.1 nC | Enhancement | |||
|
|
16,631
In-stock
|
Diodes Incorporated | MOSFET 50V N-Ch Enh FET 20Vgss 300Pd 200mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | 1.2 V | - | Enhancement | |||
|
|
62,996
In-stock
|
Diodes Incorporated | MOSFET 300mW 50V DSS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | |||||
|
|
2,692
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 50V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | Enhancement | |||||
|
|
4,242
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | Enhancement | |||||
|
|
4,603
In-stock
|
Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||
|
|
5,400
In-stock
|
Diodes Incorporated | MOSFET N-Ch. 50V 500mA AEC-Q101 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 800 mV | 0.6 nC | Enhancement | |||
|
|
5,720
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 5 Ohms | Enhancement | |||||
|
|
5,450
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 50Vdss 12Vgss 160mA | 12 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 3.1 Ohms | 800 mV | - | Enhancement | |||
|
|
3,968
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | +/- 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, NPN | 50 V | 160 mA | 3.1 Ohms | 700 mV | Enhancement | ||||
|
|
8,997
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 41V-60V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.8 Ohms | 800 pC | Enhancement | ||||
|
|
359
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.3 Ohms | 400 mV | 800 pC | Enhancement | |||
|
|
955
In-stock
|
Diodes Incorporated | MOSFET PNP/NMOS | +/- 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, PNP | 50 V | 160 mA | 3.1 Ohms | 700 mV | Enhancement | ||||
|
|
14,995
In-stock
|
Diodes Incorporated | MOSFET .15W 50V .28A | 20 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 280 mA | 2 Ohms | Enhancement | |||||
|
|
9,000
In-stock
|
Diodes Incorporated | MOSFET .2W 50V .16A | 12 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 4 Ohms | Enhancement | |||||
|
|
5,965
In-stock
|
Diodes Incorporated | MOSFET N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | 1 V | 0.6 nC | Enhancement | |||
|
|
11,760
In-stock
|
Diodes Incorporated | MOSFET FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 250 mA | 3 Ohms | 1.5 V | 1.2 nC | Enhancement | |||
|
|
VIEW | Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||
|
|
VIEW | Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | 1 V | 0.6 nC | Enhancement | |||
|
|
VIEW | Diodes Incorporated | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | 16 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 9.1 A | 15 mOhms | 2 V | 6.1 nC | Enhancement |
