- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
45 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,457,980
In-stock
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onsemi | MOSFET 50V 200mA N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | |||||||
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135,283
In-stock
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onsemi | MOSFET 50V 200mA N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | |||||||
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302,780
In-stock
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Fairchild Semiconductor | MOSFET SOT-23 N-CH LOGIC | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 220 mA | 3.5 Ohms | Enhancement | |||||||
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36,533
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 2 Ohms | Enhancement | |||||||
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4,086
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 16 A | 47 mOhms | Enhancement | |||||||
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3,158
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 16 A | 47 mOhms | Enhancement | |||||||
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27,642
In-stock
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onsemi | MOSFET NFET 50V 200MA 3.5O | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 5.6 Ohms | 1.5 V | |||||||
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3,835
In-stock
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Fairchild Semiconductor | MOSFET TO-251AA N-Ch Power | 10 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | |||||||
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3,174
In-stock
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Fairchild Semiconductor | MOSFET TO-252AA N-Ch Power | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | |||||||
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5,000
In-stock
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Fairchild Semiconductor | MOSFET TO-252 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | |||||||
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2,751
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | |||||||
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4,473
In-stock
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Diodes Incorporated | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | 16 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 9.1 A | 15 mOhms | 2 V | 6.1 nC | Enhancement | |||||
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1,757
In-stock
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Vishay Semiconductors | MOSFET 50V 50A 75W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 50 A | 0.009 Ohms | 1.5 V | 52 nC | Enhancement | TrenchFET | ||||
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16,631
In-stock
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Diodes Incorporated | MOSFET 50V N-Ch Enh FET 20Vgss 300Pd 200mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | 1.2 V | - | Enhancement | |||||
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8,840
In-stock
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Fairchild Semiconductor | MOSFET 0.20A, 50V N-Channel SOT-23 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | 1.25 V | 0.549 nC | Enhancement | |||||
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62,996
In-stock
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Diodes Incorporated | MOSFET 300mW 50V DSS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | |||||||
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12,852
In-stock
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Fairchild Semiconductor | MOSFET 50V N-CH Logic Level | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 50 V | 210 mA | 6 Ohms | Enhancement | ||||||||||
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2,692
In-stock
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Diodes Incorporated | MOSFET N-Chnl 50V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | Enhancement | |||||||
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4,242
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | Enhancement | |||||||
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1,297
In-stock
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Fairchild Semiconductor | MOSFET N-Channel 50V 33A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 50 V | 30 A | 40 mOhms | Enhancement | |||||||
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8,016
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 100 mA | 7.8 Ohms | 1.57 nC | |||||||
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4,603
In-stock
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Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||||
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5,400
In-stock
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Diodes Incorporated | MOSFET N-Ch. 50V 500mA AEC-Q101 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 800 mV | 0.6 nC | Enhancement | |||||
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3,577
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 100 mA | 6 Ohms | ||||||||
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5,720
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 5 Ohms | Enhancement | |||||||
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5,450
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 50Vdss 12Vgss 160mA | 12 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 3.1 Ohms | 800 mV | - | Enhancement | |||||
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3,968
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | +/- 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, NPN | 50 V | 160 mA | 3.1 Ohms | 700 mV | Enhancement | ||||||
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8,997
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 41V-60V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.8 Ohms | 800 pC | Enhancement | ||||||
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359
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.3 Ohms | 400 mV | 800 pC | Enhancement | |||||
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955
In-stock
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Diodes Incorporated | MOSFET PNP/NMOS | +/- 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, PNP | 50 V | 160 mA | 3.1 Ohms | 700 mV | Enhancement |