- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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786
In-stock
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Fairchild Semiconductor | MOSFET NCH 60V 3.0Mohm | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 193 A | 3.2 mOhms | PowerTrench | ||||||||
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985
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CHAN SupreMOS | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 107 mOhms | |||||||||||
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887
In-stock
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Fairchild Semiconductor | MOSFET HIGH POWER | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 600 mOhms | Enhancement | SuperFET | ||||||
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890
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25.5 A | 110 mOhms | Enhancement | |||||||
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435
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 54 nC | Enhancement | |||||
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988
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | |||||||
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998
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.6 A | 1.5 Ohms | Enhancement | |||||||
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1,000
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 4.2 A | 3.3 Ohms | Enhancement | |||||||
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728
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 2.5 Ohms | Enhancement | |||||||
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980
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 22 mOhms | Enhancement | |||||||
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717
In-stock
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Fairchild Semiconductor | MOSFET N-CH/500V/13A/QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 390 mOhms | Enhancement | |||||||
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340
In-stock
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Fairchild Semiconductor | MOSFET TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | ||||||
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390
In-stock
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Fairchild Semiconductor | MOSFET 250V 0.11OHM 25.5A N-CH MOSFET | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 250 V | 25.5 A | 110 Ohm | UltraFET QFET | |||||||||||
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410
In-stock
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Fairchild Semiconductor | MOSFET 40V, 110A, 2.2m Ohm NChannel PowerTrench | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 2.2 Ohms | 2.83 V | 14 nC, 107 nC | PowerTrench | |||||
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463
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 6.4 mOhms | 2 V | 43 nC | Enhancement | PowerTrench | ||||
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1,000
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 2.8 Ohms | Enhancement | |||||||
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1,600
In-stock
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Fairchild Semiconductor | MOSFET 60V 80a 0.0038 Ohms/VGS=10V | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | ||||||
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880
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 12 mOhms | PowerTrench |