- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
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- Rds On - Drain-Source Resistance :
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- 2.8 Ohms (1)
- 20 mOhms (2)
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- 22.5 mOhms (1)
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- 26.5 mOhms (1)
- 280 mOhms (1)
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- 3.2 mOhms (2)
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- 3.3 Ohms (1)
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- 3.7 mOhms (1)
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- 3.9 mOhms (1)
- 380 mOhms (5)
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- 4 mOhms (1)
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- 450 mOhms (1)
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- 5 mOhms (1)
- 5.1 mOhms (1)
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- 560 mOhms (2)
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- 6.5 mOhms (2)
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- 600 mOhms (3)
- 7 mOhms (2)
- 7.34 mOhms (1)
- 7.5 mOhms (1)
- 750 mOhms (1)
- 77.5 mOhms (1)
- 8 mOhms (1)
- 8.4 mOhms (1)
- 9 mOhms (1)
- 970 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (2)
- 107 nC (1)
- 120 nC (9)
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- 411 nC (1)
- 42 nC (2)
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- 44.7 nC (1)
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- 57 nC (1)
- 58 nC (1)
- 60 nC (3)
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- 63 nC (1)
- 64.7 nC (1)
- 7 nC (1)
- 70 nC (1)
- 71 nC (1)
- 72 nC (1)
- 73 nC (1)
- 75 nC (1)
- 76 nC (1)
- 82 nC (1)
- 83 nC (1)
- 85 nC (2)
- 86.7 nC (1)
- 87 nC (1)
- 91 nC (1)
- Applied Filters :
126 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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786
In-stock
|
Fairchild Semiconductor | MOSFET NCH 60V 3.0Mohm | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 193 A | 3.2 mOhms | PowerTrench | |||||||
|
|
985
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-CHAN SupreMOS | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 107 mOhms | ||||||||||
|
|
2,662
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | ||||||||
|
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1,840
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 500V 5.0 Amp | TO-262-3 | Tube | Si | ||||||||||||||||
|
|
3,200
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | |||||
|
|
1,816
In-stock
|
Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | ||||
|
|
2,976
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 100 Amp | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 3.2 mOhms | Enhancement | ||||||
|
|
706
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | |||
|
|
1,460
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 800V 4.1 Amp | TO-262-3 | Tube | Si | ||||||||||||||||
|
|
3,973
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | ||||||
|
|
887
In-stock
|
Fairchild Semiconductor | MOSFET HIGH POWER | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 600 mOhms | Enhancement | SuperFET | |||||
|
|
890
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25.5 A | 110 mOhms | Enhancement | ||||||
|
|
435
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 54 nC | Enhancement | ||||
|
|
988
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | ||||||
|
|
998
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.6 A | 1.5 Ohms | Enhancement | ||||||
|
|
1,000
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 4.2 A | 3.3 Ohms | Enhancement | ||||||
|
|
1,987
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 49A 17.5mOhm 42nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | ||||||||
|
|
326
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 180A 4.7mOhm 143nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 143 nC | ||||||||
|
|
714
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 500V 11 Amp | TO-262-3 | Tube | Si | ||||||||||||||||
|
|
721
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 500V 8.0 Amp | TO-262-3 | Tube | Si | ||||||||||||||||
|
|
728
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
|
|
394
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | 16 V | Through Hole | TO-262-3 | Tube | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 87 nC | |||||||||
|
|
949
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | ||||||||
|
|
838
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 8A I2PAK-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
|
815
In-stock
|
STMicroelectronics | MOSFET N-Ch, 55V-0.005ohms 80A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 6.5 mOhms | Enhancement | ||||||
|
|
430
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | CoolMOS | ||||||||||
|
|
343
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 270A 2.4mOhm 91nC Log Lvl | 16 V | Through Hole | TO-262-3 | Tube | Si | N-Channel | 60 V | 270 A | 2.8 mOhms | 91 nC | |||||||||
|
|
2,302
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | ||||||||
|
|
734
In-stock
|
IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | |||
|
|
858
In-stock
|
Vishay Semiconductors | MOSFET N-Chan 500V 8.0 Amp | TO-262-3 | Tube | Si |
