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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 500V 3.6A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) D-PAK 0 375 N-Channel 500V 3.6A (Tc) 2.2 Ohm @ 2.2A, 10V 5V @ 250µA 20nC @ 10V 810pF @ 25V 10V ±20V 78W (Tc)
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Infineon Technologies MOSFET N-CH 55V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 375 N-Channel 55V 42A (Tc) 8 mOhm @ 42A, 10V 3V @ 250µA 66nC @ 5V 2900pF @ 25V 4.5V, 10V ±16V 130W (Tc)
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Infineon Technologies MOSFET N-CH 250V 14A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 375 N-Channel 250V 14A (Tc) 260 mOhm @ 8.4A, 10V 5V @ 250µA 35nC @ 10V 810pF @ 25V 10V ±30V 144W (Tc)
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Infineon Technologies MOSFET N-CH 100V 16A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 375 N-Channel 100V 16A (Tc) 115 mOhm @ 10A, 10V 4V @ 250µA 44nC @ 10V 640pF @ 25V 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET P-CH 150V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - Obsolete D-PAK 0 375 P-Channel 150V 13A (Tc) 295 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V - - 110W (Tc)
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