- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,027
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | |||||
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3,471
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3 | WDSON-2-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 83 A | 5.6 mOhms | OptiMOS | |||||||||||
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4,109
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | ||||
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GET PRICE |
15,130
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | OptiMOS | |||
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42,800
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 140A 7mOhm 170nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 5.6 mOhms | 170 nC | |||||||||
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GET PRICE |
12,000
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 140A 7mOhm 170nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 130 A | 5.6 mOhms | 4 V | 170 nC | |||||
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GET PRICE |
27,700
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | ||||
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4,494
In-stock
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Infineon Technologies | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 20 A | 5.6 mOhms | 1.6 V | 17 nC | FastIRFet | |||||
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1,516
In-stock
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Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 114 A | 5.6 mOhms | 3 V | 61 nC | Enhancement | OptiMOS |