- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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14,998
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | |||
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20,433
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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15,594
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-323-3 | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | |||
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13,771
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | |||
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16,713
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.4A SOT-323-3 | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 107 mOhms | 300 mV | 600 pC | Enhancement | |||
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11,038
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | |||
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7,950
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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9,135
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 280mA SOT-323-3 | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 280 mA | 3.5 Ohms | 0.1 nC | ||||||||
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5,982
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.3 Ohms | 800 mV | 1 nC | Enhancement | |||
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9,468
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.4A SOT-323-3 | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 107 mOhms | 300 mV | 600 pC | Enhancement | |||
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11,588
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-323-3 | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | |||
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18,000
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement | |||
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7,215
In-stock
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Infineon Technologies | MOSFET N-Ch SOT-323-3 | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | |||||||||||||
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3,628
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | |||
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4,783
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.3 Ohms | 800 mV | 1 nC | Enhancement | |||
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53,970
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 280mA SOT-323-3 | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 280 mA | 3.5 Ohms | 1.4 V | 1 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | SOT-323-3 | Reel | 1 Channel | Si | P-Channel |
