- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - 1.3 nC (3)
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- Applied Filters :
106 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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29,889
In-stock
|
Nexperia | MOSFET TAPE13 PWR-MOS | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 870 mA | 440 mOhms | Enhancement | ||||||
|
|
19,590
In-stock
|
Nexperia | MOSFET P-CH -50 V -150 mA | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 150 mA | 7.5 Ohms | 0.35 nC | |||||||||
|
|
2,914
In-stock
|
Nexperia | MOSFET N-CH 60 V 320 mA | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 320 mA | 1.6 Ohms | 0.7 nC | |||||||||
|
|
25,096
In-stock
|
Nexperia | MOSFET 30V 350 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | 0.9 V | 0.52 nC | |||||
|
|
26,480
In-stock
|
Nexperia | MOSFET N-CH 60 V 320 mA | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 320 mA | 1.6 Ohms | 0.8 nC | |||||||||
|
|
11,451
In-stock
|
Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 200 mA | 1.4 Ohms | Enhancement | ||||||
|
|
13,599
In-stock
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Diodes Incorporated | MOSFET -50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 6 Ohms | Enhancement | ||||||
|
|
13,116
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 52 mOhms | 1.5 V | 11.7 nC | Enhancement | ||||
|
|
7,829
In-stock
|
Diodes Incorporated | MOSFET 0.35W 28V 1.6A | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 28 V | 1.6 A | 88 mOhms | Enhancement | ||||||
|
|
6,960
In-stock
|
onsemi | MOSFET NCH 1.2V Power MOSFE | 9 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 540 mOhms | 300 mV | 2.9 nC | Enhancement | ||||
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|
6,407
In-stock
|
onsemi | MOSFET PCH 2.5V Power MOSFE | +/- 10 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 430 mOhms | - 1.3 V | 2.8 nC | Enhancement | ||||
|
|
8,300
In-stock
|
onsemi | MOSFET LOW-NOISE AMPLIFIER | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 180 mOhms | 2 nC | ||||||
|
|
14,998
In-stock
|
Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | ||||
|
|
20,433
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
|
2,723
In-stock
|
Diodes Incorporated | MOSFET 60V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 115 mA | 2.6 Ohms | Enhancement | ||||||
|
|
6,479
In-stock
|
Nexperia | MOSFET Single N-Channel 60V 300mA | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 2.8 Ohms | 0.5 nC | ||||||
|
|
15,594
In-stock
|
Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-323-3 | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | ||||
|
|
13,771
In-stock
|
Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||||
|
|
5,765
In-stock
|
Diodes Incorporated | MOSFET P-Ch -20V VDSS Enchanced Mosfet | 6 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 820 mA | 1.5 Ohms | Enhancement | ||||||
|
|
11,043
In-stock
|
Fairchild Semiconductor | MOSFET N-Chan Enhancement Mode Field Effect | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | Enhancement | ||||||
|
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12,817
In-stock
|
Fairchild Semiconductor | MOSFET NCHAN Enhance MOSFET | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 3 Ohms | Enhancement | |||||||||
|
|
12,852
In-stock
|
Fairchild Semiconductor | MOSFET 50V N-CH Logic Level | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 50 V | 210 mA | 6 Ohms | Enhancement | |||||||||
|
|
4,242
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | Enhancement | ||||||
|
|
3,475
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 140 mOhms | 1 V | 5.4 nC | Enhancement | ||||
|
|
16,713
In-stock
|
Infineon Technologies | MOSFET N-Ch 20V 1.4A SOT-323-3 | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 107 mOhms | 300 mV | 600 pC | Enhancement | ||||
|
|
3,068
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | ||||
|
|
13,120
In-stock
|
Nexperia | MOSFET NX3020NAKW/SC-70/REEL 7" Q1/T1 | - 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 mA | 2.7 Ohms | 1.2 V | 0.34 nC | |||||
|
|
46,798
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | ||||
|
|
2,810
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | 5 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.5 A | 69 mOhms | |||||||
|
|
2,805
In-stock
|
onsemi | MOSFET NCH 0.9V DRIVE SERIE | 5 V | SMD/SMT | SOT-323-3 | - 5 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.5 A | 33 mOhms | 300 mV | 11 nC | Enhancement |
