- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
654
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.6 mOhms | 1.2 V | 166 nC | Enhancement | OptiMOS | |||
|
|
920
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.6 mOhms | 124 nC | OptiMOS | |||||
|
|
356
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.8 mOhms | 2.1 V | 124 nC | Enhancement | ||||
|
|
243
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.8 mOhms | 2.1 V | 124 nC | Enhancement | OptiMOS | |||
|
|
1,867
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.3 mOhms | 2 V | 165 nC | Enhancement | OptiMOS | |||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.3 mOhms | 2 V | 165 nC | Enhancement | OptiMOS | |||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.6 mOhms | 1.2 V | 166 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.9 mOhms | 2 V | 53 nC | |||||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 270 nC | Enhancement | ||||
|
|
580
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 270 nC | Enhancement | OptiMOS | |||
|
|
440
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.1 mOhms | 3 V | 206 nC | Enhancement | ||||
|
|
159
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 150 nC | OptiMOS | |||||
|
|
GET PRICE |
2,700
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.3 mOhms | 2 V | 160 nC | Enhancement | OptiMOS |