- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 1.95 mOhms (1)
- 100 mOhms (1)
- 106 mOhms (5)
- 11 mOhms (1)
- 11.7 mOhms (1)
- 111 mOhms (2)
- 135 mOhms (1)
- 140 mOhms (1)
- 15 mOhms (1)
- 157 mOhms (1)
- 17 mOhms (1)
- 2.1 mOhms (2)
- 21 mOhms (2)
- 22 mOhms (1)
- 250 mOhms (1)
- 29 mOhms (1)
- 3.5 mOhms (1)
- 30 mOhms (1)
- 35 mOhms (1)
- 4.6 mOhms (1)
- 40 mOhms (4)
- 50 mOhms (2)
- 8.2 mOhms (1)
- 8.5 mOhms (1)
- 98 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
36 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,189
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 8.2mOhms 87nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.2 mOhms | 87 nC | Enhancement | |||||
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3,698
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 11mOhms 22nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 11 mOhms | 22 nC | Enhancement | |||||
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3,250
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | 12 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 100 A | 2.1 mOhms | 700 mV | 52.7 nC | Enhancement | OptiMOS | |||
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5,118
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 6.8A 35mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | |||||
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3,884
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 40mOhms 33.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 40 mOhms | 33.3 nC | Enhancement | |||||
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2,826
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | 12 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 19 A | 4.6 mOhms | Enhancement | OptiMOS | |||||
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4,026
In-stock
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Infineon Technologies | MOSFET DUAL -20V P-CH 12 VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 4.3 A | 140 mOhms | 14.7 nC | Enhancement | |||||
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4,472
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 9.9A 14.6mOhm 2.5V cpbl | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.9 A | 15 mOhms | 1.1 V | 11 nC | |||||
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8,234
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 3.8A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.8 A | 21 mOhms | Enhancement | ||||||
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3,015
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 50mOhms 13.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 50 mOhms | 13.3 nC | Enhancement | |||||
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2,375
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 15.5mOhms 23nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 17 mOhms | 0.8 V to 2 V | 23 nC | Enhancement | ||||
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2,469
In-stock
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Infineon Technologies | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | Enhancement | |||||
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2,199
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 8.2 A | 21 mOhms | - 26 nC | Enhancement | OptiMOS | ||||
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15,594
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-323-3 | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | ||||
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3,656
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | ||||
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1,315
In-stock
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Infineon Technologies | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 5.3 A | 98 mOhms | 19 nC | Enhancement | |||||
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3,743
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | ||||
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1,212
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 22 A | 11.7 mOhms | 0.5 V to 1.1 V | 14 nC | Enhancement | ||||
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1,555
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 29mOhms 18nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 29 mOhms | 0.7 V | 18 nC | Enhancement | ||||
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644
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 60mOhms 25nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 100 mOhms | 25 nC | Enhancement | |||||
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6,619
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | ||||
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2,200
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 20V 2.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.4 A | 135 mOhms | 5.3 nC | Enhancement | |||||
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9,900
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC | 12 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | 0.8 V | 41 nC | |||||
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5,775
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 111 mOhms | 700 mV | 800 pC | Enhancement | ||||
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2,528
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.5 A | 22 mOhms | 700 mV | 5.8 nC | Enhancement | ||||
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7,940
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 111 mOhms | 700 mV | 800 pC | Enhancement | ||||
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11,588
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-323-3 | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement | ||||
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8,500
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | ||||
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8,900
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.5 A | 40 mOhms | 700 mV | 3.2 nC | Enhancement | ||||
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2,997
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 1.5A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 106 mOhms | 700 mV | 800 pC | Enhancement |
