- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,189
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 8.2mOhms 87nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.2 mOhms | 87 nC | Enhancement | ||||||
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3,884
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 40mOhms 33.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 40 mOhms | 33.3 nC | Enhancement | ||||||
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4,026
In-stock
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Infineon Technologies | MOSFET DUAL -20V P-CH 12 VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 4.3 A | 140 mOhms | 14.7 nC | Enhancement | ||||||
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2,469
In-stock
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Infineon Technologies | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | Enhancement | ||||||
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2,199
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 8.2 A | 21 mOhms | - 26 nC | Enhancement | OptiMOS | |||||
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1,315
In-stock
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Infineon Technologies | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 5.3 A | 98 mOhms | 19 nC | Enhancement | ||||||
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644
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 60mOhms 25nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 100 mOhms | 25 nC | Enhancement | ||||||
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2,528
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.5 A | 22 mOhms | 700 mV | 5.8 nC | Enhancement | |||||
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20,600
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -20V -2.6A 135mOhm -2.5V cpbl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 157 mOhms | - 1.1 V | 2.9 nC |