- Mounting Style :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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41
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | 200 nC | Depletion | |||||
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55
In-stock
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IXYS | MOSFET 10 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | 6.5 V | 56 nC | Enhancement | Polar, HiPerFET | |||
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48
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | 64 nC | HyperFET | |||||||
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VIEW | IXYS | MOSFET 1KV 10A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 1000V 1 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.1 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 1000V 1.05 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | Enhancement |
