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47 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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520
In-stock
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IXYS | MOSFET 12 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | 6.5 V | 80 nC | Enhancement | Polar, HiPerFET | |||
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133
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 1.05 Ohms | 64 nC | HyperFET | |||||||
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47
In-stock
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IXYS | MOSFET 12 Amps 1000V 1.3 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.3 Ohms | Enhancement | ||||||
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41
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | 200 nC | Depletion | |||||
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76
In-stock
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IXYS | MOSFET 15 Amps 1000V 0.76 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 760 mOhms | 6.5 V | 97 nC | Enhancement | Polar, HiPerFET | |||
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146
In-stock
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IXYS | MOSFET 6Amps 1000V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 6 A | 2.2 Ohms | 95 nC | |||||||
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55
In-stock
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IXYS | MOSFET 10 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | 6.5 V | 56 nC | Enhancement | Polar, HiPerFET | |||
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34
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 660 mOhms | 90 nC | HyperFET | ||||||
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43
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 195 nC | HyperFET | ||||||
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18
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 23 A | 350 mOhms | 195 nC | HyperFET | ||||||
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60
In-stock
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IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | |||
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37
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 440 mOhms | 140 nC | HyperFET | |||||||
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30
In-stock
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IXYS | MOSFET 26 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 20 A | 390 mOhms | Enhancement | HyperFET | |||||
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21
In-stock
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IXYS | MOSFET 20 Amps 1000V 1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 11 A | 640 mOhms | 6.5 V | 126 nC | Enhancement | Polar, HiPerFET | |||
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19
In-stock
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IXYS | MOSFET 26 Amps 1000V 0.39 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 430 mOhms | 6.5 V | 197 nC | Enhancement | Polar, HiPerFET | |||
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48
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | 64 nC | HyperFET | |||||||
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9
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 490 mOhms | 140 nC | HyperFET | |||||||
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90
In-stock
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IXYS | MOSFET 20 Amps 1000V 1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 20 A | 570 mOhms | 6.5 V | 126 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | IXYS | MOSFET 30 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 450 mOhms | 5 V | 545 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 3 Amps 1000V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3 A | 4.8 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 32 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 340 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 1 Rds | Through Hole | TO-247-3 | Tube | Si | 1000 V | 15 A | 1 Ohms | ||||||||||||
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VIEW | IXYS | MOSFET 30 Amps 1000V 0.35 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 400 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 1KV 10A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 1KV 22A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 390 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 18 Amps 1000V 0.5 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 500 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 14 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 9.5 A | 1 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 1KV 15A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
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10
In-stock
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IXYS | MOSFET 24 Amps 1000V 0.39 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET |
