- Mounting Style :
- Minimum Operating Temperature :
- Qg - Gate Charge :
27 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
133
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 1.05 Ohms | 64 nC | HyperFET | |||||||
|
34
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 660 mOhms | 90 nC | HyperFET | ||||||
|
43
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 195 nC | HyperFET | ||||||
|
18
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 23 A | 350 mOhms | 195 nC | HyperFET | ||||||
|
37
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 440 mOhms | 140 nC | HyperFET | |||||||
|
30
In-stock
|
IXYS | MOSFET 26 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 20 A | 390 mOhms | Enhancement | HyperFET | |||||
|
48
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | 64 nC | HyperFET | |||||||
|
9
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 490 mOhms | 140 nC | HyperFET | |||||||
|
VIEW | IXYS | MOSFET 32 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 340 mOhms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 30 Amps 1000V 0.35 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 400 mOhms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 1KV 10A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 1KV 22A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 390 mOhms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 18 Amps 1000V 0.5 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 500 mOhms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 14 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 9.5 A | 1 Ohms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 1KV 15A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
|
10
In-stock
|
IXYS | MOSFET 24 Amps 1000V 0.39 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 1KV 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 15 Amps 1000V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 14 Amps 1000V 0.90 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 900 mOhms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 1KV 6A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 2 Ohms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 3.5 Amps 1000V 3 Rds | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3 Ohms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 13 Amps 1000V 0.9 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12.5 A | 900 mOhms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 6 Amps 1000V 2 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 1.9 Ohms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 12 Amps 1000V 1 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.1 Ohms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 4 Amps 1000V 2.8 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3 Ohms | Enhancement | HyperFET | |||||
|
VIEW | IXYS | MOSFET 14 Amps 1000V 0.75 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 750 mOhms | Enhancement | HyperFET |