- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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33 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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298
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | |||
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225
In-stock
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IXYS | MOSFET Polar HiperFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 40 A | 210 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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50
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 900V 56A | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 56 A | 135 mOhms | 3.5 V to 6.5 V | 375 nC | HyperFET | ||||
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45
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18 A | 600 mOhms | 3 V to 6 V | 97 nC | Enhancement | HyperFET | |||
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20
In-stock
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IXYS | MOSFET Polar HiPerFETs MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 32 A | 300 mOhms | 3.5 V to 6.5 V | 215 nC | Enhancement | HyperFET | |||
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27
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 40 A | 210 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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24
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 21 A | 230 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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30
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | |||
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11
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 900 mOhms | 3.5 V to 6.5 V | 56 nC | Enhancement | HyperFET | |||
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8
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 10.5 A | 660 mOhms | HyperFET | ||||||
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19
In-stock
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IXYS | MOSFET 900V 26A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 26 A | 300 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18 A | 600 mOhms | HyperFET | ||||||
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VIEW | IXYS | MOSFET Polar HiPerFETs MOSFET w/Fast Diode | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 32 A | 300 mOhms | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 16 Amps 900V 0.65 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 16 A | 650 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 900V 0.45 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 450 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 52 A | 160 mOhms | 3.5 V to 6.5 V | 308 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 900V 12A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 1.1 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 34 Amps 900V 0.22 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 34 A | 220 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 900V 6A | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.8 Ohms | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 25 Amps 900V 0.33 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 25 A | 330 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 6 Amps 900V 1.4 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.4 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 13 Amps 900V 0.8 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 13 A | 800 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 25 Amps 900V 0.33 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 25 A | 330 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 900V 0.45 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 450 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 900V 0.9 Ohm Rds | 20 V | Through Hole | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 900 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 12 Amps 900V 0.9 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 900 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 10 Amps 900V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 10 A | 1.1 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 22 Amps 900V 0.47W Rds | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 22 A | 470 mOhms | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 16 Amps 900V 0.65 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 16 A | 650 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 7 Amps 900V 1.5W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 7 A | 1.5 Ohms | Enhancement | HyperFET |
