- Vgs - Gate-Source Voltage :
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- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 1 Ohms (5)
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- 2 Ohms (5)
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- 980 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 11 nC (6)
- 113 nC (1)
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- 17.3 nC (3)
- 17.7 nC (3)
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- 22.7 nC (2)
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- 30.4 nC (1)
- 308 nC (1)
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- 35 nC (1)
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- 40 nC (4)
- 42 nC (3)
- 43 nC (2)
- 46 nC (2)
- 46.5 nC (4)
- 5.3 nC (3)
- 56 nC (1)
- 68 nC (1)
- 89 nC (2)
- 9.5 nC (3)
- 94 nC (5)
- 95 nC (1)
- 97 nC (1)
- Tradename :
- Applied Filters :
135 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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999
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 4 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||||
|
|
100
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||||
|
|
599
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||||
|
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1,000
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | ||||
|
|
1,500
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||||
|
|
250
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | |||||
|
|
140
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
|
|
50
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
|
|
82
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
|
|
182
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
|
|
188
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
|
|
1,371
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 36 A | 100 mOhms | 2.5 V | 270 nC | Enhancement | CoolMOS | |||
|
|
5,610
In-stock
|
Fairchild Semiconductor | MOSFET 900V 1.6A 7.8Ohm N-Channel | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | Enhancement | ||||||
|
|
300,300
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | Enhancement | ||||||
|
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/900V/8A/QFET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 6.3 A | 1.6 Ohms | 5 V | 35 nC | Enhancement | QFET | |||
|
|
1,058
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/900V/7A/A.QFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 7.2 A | 1.1 Ohms | Enhancement | QFET | |||||
|
|
823
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 11 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 880 mOhms | 113 nC | Enhancement | |||||
|
|
688
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 15 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 15 A | 550 mOhms | 190 nC | Enhancement | |||||
|
|
4,864
In-stock
|
Fairchild Semiconductor | MOSFET 900V 1.6A 7.8Ohm N-Channel | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | QFET | |||||||||
|
|
677
In-stock
|
STMicroelectronics | MOSFET N Ch 900V Zener SuperMESH 9.2A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 9.2 A | 980 mOhms | 95 nC | Enhancement | |||||
|
|
771
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | |||
|
|
943
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 6 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 46.5 nC | Enhancement | |||||
|
|
437
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 15A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 15 A | 340 mOhms | Enhancement | CoolMOS | |||||
|
|
2,952
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 5.1A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | 3 V | 28 nC | CoolMOS | ||||
|
|
1,187
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 46.5 nC | Enhancement | |||||
|
|
883
In-stock
|
STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
|
|
865
In-stock
|
STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
|
|
962
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS |
