- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,073
In-stock
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Nexperia | MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.1 A | 46 mOhms | 1.3 V | 19 nC | Enhancement | |||
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2,720
In-stock
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Nexperia | MOSFET PMV230ENEA/TO-236AB/REEL 7" Q3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.5 A | 176 mOhms | 1.3 V | 4.8 nC | Enhancement | |||
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14,980
In-stock
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Nexperia | MOSFET 80V single N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 4.1 A | 80 mOhms | 1.3 V | 14.9 nC | Enhancement | |||
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5,261
In-stock
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Nexperia | MOSFET 60V single N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.4 A | 72 mOhms | 1.3 V | 9.2 nC | Enhancement |
