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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STFH24N60M2
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RFQ
39,300
In-stock
STMicroelectronics MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOS... 25 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 18 A 168 mOhms 2 V 29 nC Enhancement
STP25N60M2-EP
1+
$6.230
10+
$5.290
100+
$4.590
250+
$4.350
RFQ
1,435
In-stock
STMicroelectronics MOSFET 25 V Through Hole TO-220-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 18 A 188 mOhms 2 V 29 nC Enhancement
STF25N60M2-EP
1+
$6.360
10+
$5.400
100+
$4.690
250+
$4.450
RFQ
86,000
In-stock
STMicroelectronics MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh M2 EP Power M... 25 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 18 A 188 mOhms 2 V 29 nC Enhancement
STF24N65M2
1+
$2.940
10+
$2.500
100+
$2.160
250+
$2.050
RFQ
880
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 16 A 185 mOhms 2 V 29 nC Enhancement
STB24N65M2
1+
$3.100
10+
$2.640
100+
$2.290
250+
$2.170
1000+
$1.640
RFQ
697
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 16 A 185 mOhms 2 V 29 nC Enhancement
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