- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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304
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.9 mOhms | 2.5 V to 4.5 V | 120 nC | Enhancement | ||||
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250
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.7 mOhms | 2.5 V to 4.5 V | 120 nC | Enhancement | |||
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110
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 11 A | 350 mOhms | 4 V | 120 nC | Enhancement | |||
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2,000
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 11 A | 299 mOhms | 4 V | 120 nC | Enhancement | ||||
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992
In-stock
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STMicroelectronics | MOSFET | 40 V | SMD/SMT | H2PAK-2 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.1 mOhms | 4 V | 120 nC | Enhancement | |||
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1,000
In-stock
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STMicroelectronics | MOSFET | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.1 mOhms | 4 V | 120 nC | Enhancement | |||
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VIEW | STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 0.037 Ohms | 3 V | 120 nC | Enhancement |
