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- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- 99 A (2)
- Rds On - Drain-Source Resistance :
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- 250 mOhms (1)
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- 3.2 mOhms (1)
- 3.3 mOhms (7)
- 3.5 mOhms (1)
- 3.7 mOhms (1)
- 3.9 mOhms (1)
- 350 mOhms (1)
- 4.8 mOhms (6)
- 4.9 mOhms (2)
- 5 mOhms (2)
- 5.3 mOhms (4)
- 60 mOhms (4)
- 7.2 mOhms (1)
- 8 mOhms (4)
- 820 mOhms (1)
- 880 mOhms (1)
- 9 mOhms (1)
- 930 uOhms (1)
- 950 mOhms (1)
- 980 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
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84 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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8,000
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET P 75A 120nC D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 120 nC | |||||
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3,588
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -40A 60mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | ||||||||
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1,610
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 2.4 mOhms | 120 nC | ||||||||
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105,900
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||
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1,867
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 96A 10mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 96 A | 8 mOhms | 120 nC | ||||||||
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16,000
In-stock
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IR / Infineon | MOSFET MOSFT 150V 99A 12.1mOhm 77nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 99 A | 12.1 mOhms | 5 V | 120 nC | |||||||
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3,298
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 10mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 88 A | 8 mOhms | 4 V | 120 nC | Enhancement | ||||
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1,082
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.1mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||||
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4,713
In-stock
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IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 116 A | 3.5 mOhms | 3.7 V | 120 nC | StrongIRFET | ||||
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956
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
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5,455
In-stock
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onsemi | MOSFET NCH+NCH 2.5V DRIVE SERIES | 8 V | SMD/SMT | CSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 27 A | 3.2 mOhms | 4 V | 120 nC | Enhancement | ||||
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1,196
In-stock
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onsemi | MOSFET NFET SO8FL 60V 287A 1.2MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 930 uOhms | 1.2 V | 120 nC | Enhancement | ||||
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1,631
In-stock
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IR / Infineon | MOSFET MOSFT 40V 380A 1.4mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 380 A | 1 MOhms | 120 nC | Enhancement | |||||
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3,000
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 96A 10mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 96 A | 8 mOhms | 120 nC | ||||||||
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2,987
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | ||||||
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3,973
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | ||||||
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1,500
In-stock
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onsemi | MOSFET T8 40V LOW COSS | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 330 A | 1.1 mOhms | 1.2 V | 120 nC | Enhancement | ||||
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GET PRICE |
157,000
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -55V -74A 20mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC | |||||||
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1,022
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC | Enhancement | |||||
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1,019
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 127A 6mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||||
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54,900
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 127A 6mOhm 120nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 134 A | 4.8 mOhms | 120 nC | ||||||||
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800
In-stock
|
onsemi | MOSFET NFET D2PAK 100V 76A 13MOH | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 76 A | 11 mOhms | 2 V to 4 V | 120 nC | |||||
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692
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
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243
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1.4mOhms 120nC | 20 V | SMD/SMT | TO-263-7 | Tube | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.7 mOhms | 120 nC | ||||||||
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519
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||
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927
In-stock
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IR / Infineon | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 4 V | 120 nC | |||||
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923
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 130A 6.3mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 130 A | 5 mOhms | 120 nC | ||||||||
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885
In-stock
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Vishay Semiconductors | MOSFET 40V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 32 A | 0.0035 Ohms | 1.5 V | 120 nC | Enhancement | TrenchFET | |||
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90
In-stock
|
IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | 6.5 V | 120 nC | Enhancement | Polar, HiPerFET | |||
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440
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 3 V | 120 nC | Enhancement |
