- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
43,846
In-stock
|
Texas instruments | MOSFET 12V N-CH Pwr MOSFET | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 22 A | 180 mOhms | 850 mV | 1.06 nC | NexFET | ||||
|
9,586
In-stock
|
Texas instruments | MOSFET N-CH NexFET Pwr MOSFET | 8 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.6 A | 34 mOhms | 800 mV | 2.3 nC | Enhancement | NexFET | ||||
|
GET PRICE |
29,500
In-stock
|
Texas instruments | MOSFET 12V,N-Ch FemtoFET MOSFET | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 2.1 A | 180 mOhms | 850 mV | 1.06 nC | |||||
|
2,904
In-stock
|
Texas instruments | MOSFET N-CH NexFET Pwr MOSFET | 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.5 A | 20 mOhms | 850 mV | 3.9 nC | NexFET | |||||
|
1,498
In-stock
|
Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.5 A | 15.5 mOhms | 700 mV | 8.6 nC | Enhancement | NexFET | ||||
|
981
In-stock
|
Texas instruments | MOSFET CSD83325L, Dual N-Ch nel NexFET? | 10 V | SMD/SMT | BGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 8 A | 9.9 mOhms | 0.95 V | 8.4 nC | NexFET | |||||
|
2,020
In-stock
|
Texas instruments | MOSFET 12V N-Channel FemtoFETGäó MOSFET 3-PI... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.6 A | 63 mOhms | 550 mV | 1.2 nC | Enhancement | |||||
|
500
In-stock
|
Texas instruments | MOSFET 12 V N-ChanNexFET? Power MOSFET 4-DSBGA | 10 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.6 A | 14.6 mOhms | 700 mV | 7.8 nC | Enhancement | |||||
|
764
In-stock
|
Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET 3-PICOSTAR ... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 7.1 A | 15 mOhms | 500 mV | 5 nC | Enhancement | |||||
|
150
In-stock
|
Texas instruments | MOSFET 12V N-Channel FemtoFETGäó MOSFET 3-PI... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.6 A | 63 mOhms | 550 mV | 1.2 nC | Enhancement | |||||
|
889
In-stock
|
Texas instruments | MOSFET 12V N-Channel FemtoFET MOSFET | 10 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 2.9 A | 44 mOhms | 1 V | 2 nC | Enhancement | FemtoFET | ||||
|
750
In-stock
|
Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET 3-PICOSTAR ... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 7.1 A | 15 mOhms | 500 mV | 5 nC | Enhancement | |||||
|
21,000
In-stock
|
Texas instruments | MOSFET N-CH Power MOSFET 12V 9.3mohm | 8 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 14.4 A | 9.3 mOhms | 800 mV | 5.1 nC | Depletion | NexFET |