- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,744
In-stock
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Texas instruments | MOSFET 20V P-channel NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 21 mOhms | - 1.05 V | 7.5 nC | Enhancement | NexFET | |||
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GET PRICE |
46,340
In-stock
|
Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 6.3 mOhms | 1.2 V | 7.5 nC | NexFET | |||
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29,885
In-stock
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Texas instruments | MOSFET P-CH Pwr MOSFET | - 12 V | SMD/SMT | VSONP-8 | - 55 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.9 mOhms | - 900 mV | 7.5 nC | Enhancement | NexFET |
