- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
5,500
In-stock
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Toshiba | MOSFET MOSFET NCh6.8ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 40 A | 6.8 mOhms | 2 V to 4 V | 49 nC | Enhancement | ||||
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316
In-stock
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Toshiba | MOSFET MOSFET NCh 8.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.4 mOhms | 2 V to 4 V | 23 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch MOS 40A 100V 147W 4000pF 0.015 | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 40 A | 15 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 40A 600V 320W 3400pF 0.08 | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 40 A | 65 mOhms | 3 V to 5 V | 55 nC | Enhancement |