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Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK40A10N1,S4X
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RFQ
5,500
In-stock
Toshiba MOSFET MOSFET NCh6.8ohm VGS10V10uAVDS100V 20 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 100 V 40 A 6.8 mOhms 2 V to 4 V 49 nC Enhancement
TK40A06N1,S4X
1+
$0.970
10+
$0.781
100+
$0.600
500+
$0.530
RFQ
316
In-stock
Toshiba MOSFET MOSFET NCh 8.4ohm VGS10V10uAVDS60V 20 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 60 V 40 A 8.4 mOhms 2 V to 4 V 23 nC Enhancement
TK40E10K3,S1X(S
1+
$1.910
10+
$1.540
100+
$1.230
500+
$1.070
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RFQ
Toshiba MOSFET N-Ch MOS 40A 100V 147W 4000pF 0.015   Through Hole TO-220-3       1 Channel Si N-Channel 100 V 40 A 15 mOhms      
TK40J60U(F)
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RFQ
Toshiba MOSFET N-Ch MOS 40A 600V 320W 3400pF 0.08 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 40 A 65 mOhms 3 V to 5 V 55 nC Enhancement
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