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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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339
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 13mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 75 A | 13 mOhms | 106.7 nC | Enhancement | |||||
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1,617
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement | |||
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669
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 13 mOhms | 9.5 nC | Enhancement | ||||
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3
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13mOhms 62nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 71 A | 13 mOhms | 62 nC | Enhancement | ||||
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6
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 11 A | 13 mOhms | 14 nC |
