- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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16,000
In-stock
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IR / Infineon | MOSFET MOSFT 150V 99A 12.1mOhm 77nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 99 A | 12.1 mOhms | 5 V | 120 nC | |||||||
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GET PRICE |
46,820
In-stock
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IR / Infineon | MOSFET MOSFT 150V 104A 11mOhm 77nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 104 A | 9.3 mOhms | 5 V | 77 nC | ||||
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840
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 27 A | 58 mOhms | 5 V | 21 nC | |||||
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106
In-stock
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IR / Infineon | MOSFET MOSFT 100V 96A 10mOhm 120nC Qg | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 12 mOhms | 5 V | 110 nC | |||||
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376
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 5 V | 60 nC | Enhancement | ||||
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1,050
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | ||||
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800
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 15 mOhms | 5 V | 71 nC | Enhancement | ||||
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1,503
In-stock
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IR / Infineon | MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 3.7 A | 78 mOhms | 5 V | 28 nC | ||||||
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869
In-stock
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IR / Infineon | MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg | 20 V | SMD/SMT | DirectFET-SB | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 51 mOhms | 5 V | 8.3 nC | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 5 V | 26 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 5 V | 26 nC | Enhancement |