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- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- Qg - Gate Charge :
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- Tradename :
-
- GigaMOS (10)
- GigaMOS, HiperFET (1)
- HiPerFET (3)
- HyperFET (26)
- Polar (2)
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- Polar3, HiperFET (3)
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- PolarHT, HiPerFET (15)
- PolarHT, ISOPLUS247, HiPerFET (1)
- PolarHV (13)
- PolarHV, HiPerFET (15)
- PolarHV, ISOPLUS247, HiPerFET (2)
- PolarHV, ISOPLUS264, HiPerFET (3)
- QFET (2)
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- SuperFET II FRFET (8)
- Trench (2)
- Trench, HiperFET (1)
- TrenchMV (1)
- UniFET (18)
- UniFET FRFET (6)
- Applied Filters :
221 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
555
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | |||
|
|
738
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 210 A | 14.5 mOhms | 5 V | 268 nC | Enhancement | Polar3, HiperFET | |||
|
|
5,965
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Chan UniFET | 30 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 400 V | 2 A | 2.8 Ohms | 5 V | 4.5 nC | |||||||
|
|
2,673
In-stock
|
Fairchild Semiconductor | MOSFET UniFET2 500V N-chan | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 770 mOhms | 5 V | 14 nC | UniFET | ||||
|
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/900V/8A/QFET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 6.3 A | 1.6 Ohms | 5 V | 35 nC | Enhancement | QFET | |||
|
|
29,660
In-stock
|
Fairchild Semiconductor | MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 34 nC | UniFET | |||||
|
|
1,456
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 26 nC | UniFET | ||||||
|
|
1,448
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 190 mohm 650V FRFET | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 190 mOhms | 5 V | 60 nC | SuperFET II FRFET | ||||
|
|
846
In-stock
|
Fairchild Semiconductor | MOSFET 600V, 20A SuperFET | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 171 mOhms | 5 V | 78 nC | SuperFET | |||||
|
|
1,001
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 TO220 104mohm FRFET | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 104 mOhms | 5 V | 145 nC | SuperFET II FRFET | |||||
|
|
615
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | SuperFET II FRFET | |||
|
|
900
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 29.7 A | 58 mOhms | 5 V | 210 nC | |||||
|
|
437
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 79 mOhms | 5 V | 139 nC | SuperFET | ||||||
|
|
485
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/500V/50A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 89 mOhms | 5 V | 105 nC | |||||
|
|
973
In-stock
|
IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | ||||||
|
|
16,000
In-stock
|
IR / Infineon | MOSFET MOSFT 150V 99A 12.1mOhm 77nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 99 A | 12.1 mOhms | 5 V | 120 nC | |||||||
|
|
1,088
In-stock
|
IXYS | MOSFET 140 Amps 300V 0.024 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
|
|
472
In-stock
|
IXYS | MOSFET 155A 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 155 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | |||
|
|
113
In-stock
|
IXYS | MOSFET 60 Amps 800V 0.14 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 60 A | 140 mOhms | 5 V | 250 nC | Enhancement | PolarHV, HiPerFET | |||
|
|
95
In-stock
|
IXYS | MOSFET Polar Power MOSFET HiPerFET | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 295 A | 5.5 mOhms | 5 V | 279 nC | Enhancement | Polar, HiPerFET | |||
|
|
98
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 260 A | 5.2 mOhms | 5 V | 640 nC | Enhancement | HiPerFET | |||
|
|
804
In-stock
|
STMicroelectronics | MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | |||||||
|
|
419
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 650V 22 A | 3 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 139 mOhms | 5 V | 64 nC | ||||||
|
|
654
In-stock
|
IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
|
|
126
In-stock
|
IXYS | MOSFET 82 Amps 300V 0.026 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 26 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
|
|
870
In-stock
|
IXYS | MOSFET 16 Amps 800V 0.6 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16 A | 600 mOhms | 5 V | 71 nC | Enhancement | PolarHV, HiPerFET | |||
|
|
973
In-stock
|
STMicroelectronics | MOSFET N-Ch 550V 0.006 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | |||||||
|
|
276
In-stock
|
IXYS | MOSFET 500V 132A 0.039Ohm PolarP3 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 132 A | 39 mOhms | 5 V | 250 nC | HyperFET | ||||||
|
|
175
In-stock
|
IXYS | MOSFET N-CHAN 1000V 22A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | 5 V | 270 nC | Enhancement | ||||
|
|
5,040
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel UniFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1.1 Ohms | 5 V | 6 nC |
